Overcoating composition for photoresist and method for forming photoresist pattern using the same

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United States of America Patent

PATENT NO 6916594
APP PUB NO 20040142279A1
SERIAL NO

10722815

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Abstract

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Overcoating compositions for photoresist and methods for reducing linewidth of the photoresist patterns are disclosed. More specifically, an overcoating composition containing acids is coated on a whole surface of a photoresist pattern formed by a common lithography process to diffuse the acids into the photoresist pattern. The photoresist in the portion where the acids are diffused is developed with an alkali solution to be removed. As a result, the linewidth of positive photoresist patterns can be reduced, and the linewidth of negative photoresist patterns can be prevented from slimming in a subsequent linewidth measurement process using SEM.

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Patent Owner(s)

Patent OwnerAddress
HYNIX SEMICONDUCTOR INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bok, Cheol Kyu Gyeonggi-do, KR 87 2754
Jung, Jae Chang Seoul, KR 173 5411
Moon, Seung Chan Gyeonggi-do, KR 25 614
Shin, Ki Soo Gyeonggi-do, KR 32 974

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