Silicon nitride based substrate for semi-conductor components
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United States of America Patent
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Jul 12, 2005
Grant Date -
Mar 18, 2004
app pub date -
Nov 22, 2001
filing date -
Dec 4, 2000
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Expired
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Abstract
The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N2O) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage during production is less than 5% and the open porosity of the substrate is less than 15% vol. %. The invention also relates to a method for the production and use of said substrate as an element of semi-conductor components, particularly thin film solar cells, and semi-conductor components which contain said substrate.
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