Semiconductor device with double sidewall spacer and layered contact
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United States of America Patent
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Jul 5, 2005
Grant Date -
Mar 20, 2003
app pub date -
Sep 20, 2002
filing date -
Sep 20, 2001
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Abstract
A semiconductor device has a pair of impurity regions in a semiconductor substrate. A silicon layer is formed on the impurity region. A gate insulating film is formed between the impurity regions. A gate electrode is formed on the gate insulating film. A first silicon nitride film is formed on the gate electrode. A silicon oxide film is formed on a side surface of the gate electrode. A second silicon nitride film is partially formed on the silicon layer and on a side surface of the silicon oxide film. A conductive layer is formed on the silicon layer.
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