Method of forming a barrier metal in a semiconductor device
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United States of America Patent
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Jul 5, 2005
Grant Date -
Jul 1, 2004
app pub date -
Jul 14, 2003
filing date -
Dec 26, 2002
priority date (Note) -
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Abstract
Disclosed is a method of forming a barrier metal in the semiconductor device. The method comprises the steps of a) patterning a porous film on a base layer to form a via hole, b) depositing a CVD TiN film on the entire structure including the via hole, c) implementing a plasma treatment process using N2+H2, d) repeatedly implementing the steps (b) and (c) in order to bury only the pores formed on the surface of the porous film with CVD TiN, and e) forming a barrier metal on the entire structure including the via hole. Therefore, the present invention can prevent introduction of the conductive material into the base layer in a subsequent process.
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