Method for fabricating magnetic field sensor
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United States of America Patent
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Jul 5, 2005
Grant Date -
Jun 19, 2003
app pub date -
Dec 11, 2002
filing date -
Dec 18, 2001
priority date (Note) -
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Abstract
To fabricate a magnetic field sensor, a copper barrier film is formed. A magnetic metal film is formed on the barrier film. A plurality of trenches is formed with a desired thickness in the magnetic metal film. A copper film is formed in the plurality of trenches, so that multiple layers of magnetic metal film and copper film are formed. The RF semiconductor device equipped with the magnetic field sensor includes a magnetic field sensor made by the above method. The magnetic field sensor is attached on a semiconductor substrate. Metal wirings are formed at near the both sides of the magnetic field sensor. An insulating film is formed on top. An inductor is formed on the insulating film at predetermined locations.
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