Processing method and apparatus for annealing and doping semiconductor
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United States of America Patent
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Jun 28, 2005
Grant Date -
Jun 10, 2004
app pub date -
Mar 21, 2003
filing date -
Mar 26, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A treatment apparatus for annealing and/or doping of a semiconductor, the apparatus having an air shield chamber in which are disposed a treated plate including a substrate and a semiconductor layer formed directly or indirectly thereon, and a target material having atoms with which a semiconductor layer is to be doped. At least one laser beam is directed to at least a part of the semiconductor layer and at least a part of the target material. Where multiple beams are used, whether from a single or multiple sources, one beam is directed at the semiconductor layer and another beam is directed to the target material. Where a single beam is used, the beam is directed at the semiconductor layer and at least a portion of the laser beam is reflected by the semiconductor layer to be incident on the target material.
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