Thin film capacitor and fabrication method thereof
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United States of America Patent
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Jun 21, 2005
Grant Date -
Aug 5, 2004
app pub date -
Dec 30, 2003
filing date -
Jan 30, 2003
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Abstract
The present invention is directed to a method for fabricating a thin film capacitor of a metal/insulator/metal (MIM) structure, which is capable of enabling small-sizing of a semiconductor device while maintaining electrostatic capacity of a capacitor. The method comprises the steps of: forming a heterogeneous film on a lower insulation film on a structure of a semiconductor substrate; forming a plurality of projections by selectively etching the heterogeneous film; and forming a first electrode layer, a dielectric layer, and a second electrode layer on the lower insulation including the plurality of projections in order along a surface shape of the projections such that a plurality of projecting parts are formed in the first electrode layer, the dielectric layer and the second electrode layer, respectively.
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