Imager cell with pinned transfer gate
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United States of America Patent
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Jun 21, 2005
Issued Date -
N/A
app pub date -
Jan 24, 2002
filing date -
Oct 15, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An imager cell includes a photoreceptor, a sense node, and a pinned transfer gate. The pinned transfer gate is tied to the same potential of a substrate of the imager cell and is disposed between the photoreceptor and the sense node in order to transfer charge between the photoreceptor and the sense node. The imager further includes a reset transistor disposed to reset the sense node, and an output amplifier coupled to the sense node. Control circuitry supplies a photoreceptor readout clock to the photoreceptor. The readout clock includes an integration period and a transfer period. According to various embodiments of the invention, the imager cell provides improved noise performance, selective charge capacities, and improved blue light response beyond that of conventional imager cells.
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