Method of making an integrated circuit inductor wherein a plurality of apertures are formed beneath an inductive loop
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United States of America Patent
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Jun 21, 2005
Grant Date -
Apr 17, 2003
app pub date -
Nov 14, 2002
filing date -
May 25, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention relates to a method of making an integrated circuit inductor that comprises a silicon substrate and an oxide layer on the silicon substrate. In one aspect, the method comprises depositing an inductive loop on the oxide layer, and making a plurality of apertures in the oxide layer beneath the inductive loop. The method also comprises providing a plurality of bridges adjacent the apertures and provided by portions of the oxide layer between an inner region within the inductive loop and an outer region of the oxide layer without the inductive loop, the inductive loop being supported on the bridges. The method comprises forming a trench in the silicon substrate beneath the bridges, to provide an air gap between the inductive loop and the silicon substrate.
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