Nonvolatile semiconductor memory device and data writing method therefor
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United States of America Patent
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Jun 14, 2005
Grant Date -
Oct 2, 2003
app pub date -
Mar 24, 2003
filing date -
Jul 10, 1996
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Abstract
In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multivalued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.
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