Nonequilibrium photodetector with superlattice exclusion layer
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United States of America Patent
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Jun 14, 2005
Grant Date -
Aug 5, 2004
app pub date -
Jan 30, 2003
filing date -
Jan 30, 2003
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Abstract
A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. At least one extraction region is disposed on a first side of the active region and has a majority carrier of the second conductivity type. Carriers of the second conductivity type are extracted from the active region and into the extraction region under a condition of reverse bias. At least one exclusion region is disposed on a second side of the active region and has a majority carrier of the first conductivity type. The exclusion region prevents entry of its minority carriers, which are of the second conductivity type, into the active region while in a condition of reverse bias. The exclusion region includes a superlattice with a plurality of layers.
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