Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure
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United States of America Patent
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Jun 7, 2005
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N/A
app pub date -
Jul 19, 2004
filing date -
Feb 21, 2001
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Abstract
The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.
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