Semiconductor device having divided active regions with comb-teeth electrodes thereon
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United States of America Patent
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May 31, 2005
Grant Date -
Oct 3, 2002
app pub date -
Mar 14, 2002
filing date -
Mar 30, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A high-frequency semiconductor device for power amplification has a comb-teeth electrode on each of active regions formed on the front surface of the semiconductor substrate. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a plurality of rectangular-shaped active regions arranged side by side on the front surface of the semiconductor substrate, each of the active regions having interdigited gate, drain and source electrodes thereon which are connected to the respective pads by multilayer interconnection technique. Additionally, the source potential is fed from the back surface of the substrate through a metal plugged via-hole.
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