Method for modifying resist images by electron beam exposure
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United States of America Patent
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May 31, 2005
Grant Date -
Aug 5, 2004
app pub date -
Jan 31, 2003
filing date -
Jan 31, 2003
priority date (Note) -
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Abstract
It has now been surprisingly found that by exposing a photoresist to flood electron beam exposure in combination with optical exposure, that the pullback on the upper region of lithographic images in resist can be virtually eliminated during electron beam processing. This unexpected result is due to the fact that the electron beam exposure and optional bake are carried out prior to development of the resist. This means that the resist shrinkage that is seen as a result of these steps is constrained laterally by the resist film itself. Thus, the resist is free to shrink vertically, and the resulting shrinkage provides a reduction in the line slimming and an improvement in the etch rate of the resist. This leads to the formation of a better resist image.
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