Long wavelength vertical cavity surface emitting laser
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United States of America Patent
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May 24, 2005
Grant Date -
Oct 17, 2002
app pub date -
Apr 11, 2002
filing date -
Apr 11, 2001
priority date (Note) -
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Abstract
Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 μm light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.
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