(AlGa)InPN high brightness white or desired color LED's
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United States of America Patent
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May 24, 2005
Grant Date -
N/A
app pub date -
Mar 10, 2004
filing date -
Mar 10, 2004
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Expired
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Abstract
Group III-V compound semiconductor high brightness white or desire color light emitting diodes (LEDs) are disclosed. One of embodiments of the LEDs of the present invention comprises a first active layer, a second active layer, and a transition active layer sandwiched between the first and the second active layers, and is flip chip bonded on an electrically conductive submount for faster heat dissipation. Material systems for active layers of the LEDs of the present invention comprise (Al.sub.xGa.sub.1-x).sub.yIn.sub.1-yP.sub.z N.sub. 1-z. With combinations of different values of 'x', 'y', and 'z', the active layers and the transition active layer emit lights of different wavelengths. Appropriately adjusting wavelengths and intensities of emitted lights provides high brightness white or desire color.
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