Method of cleaning component in plasma processing chamber and method of producing semiconductor devices
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United States of America Patent
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May 24, 2005
Grant Date -
Aug 14, 2003
app pub date -
Feb 11, 2003
filing date -
Feb 13, 2002
priority date (Note) -
Expired
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Abstract
A component having small holes, such as a silicon electrode plate having gas nozzles, used in a plasma processing apparatus is cleaned by producing a cavitation zone that extends through an entire depth of the holes so that deposited layers on the inner walls of the holes formed during the use in the apparatus are removed. The cleaned component can subsequently be re-used in the apparatus, and the production cost and the consumption of natural resources are decreased.
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