P-type single crystal zinc-oxide having low resistivity and method for preparation thereof
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United States of America Patent
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May 24, 2005
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N/A
app pub date -
Jul 4, 2000
filing date -
Aug 13, 1999
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Expired
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Abstract
The present invention provides a low-resistivity p-type single-crystal zinc oxide. An n-type dopant and p-type dopant are doped into zinc oxide with higher concentration of the p-type dopant than that of the n-type dopant during forming a single-crystal of the zinc oxide through a thin film forming process. Further, an element of the second group is co-doped to allow oxygen to be stabilized.
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