Data writing and reading methods for flash memories and circuitry thereof

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United States of America Patent

PATENT NO 6894927
APP PUB NO 20040085816A1
SERIAL NO

10654392

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Abstract

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Data writing and reading methods and the implementation circuitry is revealed, in which two flash memories are connected to a data bus in parallel, and two data writing or reading signal lines are respectively electrically connected to each flash memory. The data writing or reading timings of flash memories are controlled by two non-overlapping data writing or reading signals, which may differ from each other by 180°, thereby data can be written into or read from the flash memory so as to increase the data writing and reading efficiencies.

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Patent Owner(s)

Patent OwnerAddress
LEADTEK RESEARCH INC18F NO 166 JIAN 1ST RD ZHONGHE DIST NEW TAIPEI CITY 235

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Mike Jhonghe, TW 7 362

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