Trench isolated transistors, trench isolation structures, memory cells, and DRAMs
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United States of America Patent
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May 17, 2005
Grant Date -
Sep 5, 2002
app pub date -
Nov 8, 2001
filing date -
Aug 31, 2000
priority date (Note) -
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Abstract
An isolation trench in a semiconductor includes a first isolation trench portion having a first depth and having a first sidewall intersecting a surface of the semiconductor at a first angle. A second isolation trench portion extends within and below the first isolation trench portion. The second isolation trench portion has a second depth and includes a second sidewall. The second sidewall intersects the first sidewall at an angle with respect to the surface that is greater than the first angle. A dielectric material fills the first and second isolation trench portions.
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