Method for depositing a very high phosphorus doped silicon oxide film
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 17, 2005
Grant Date -
Jun 24, 2004
app pub date -
Sep 13, 2001
filing date -
Sep 13, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A thermal activated SACVD method for depositing a phosphorus oxide layer onto a silicon oxide wafer comprising the steps of: loading an SACVD device with a silicon oxide wafer; depositing a phosphorus doped oxide (PSG) layer on the USG layer using pure oxygen and a phosphorus and silicon source; purging the SACVD device; and depositing a boron and phosphorus doped oxide (BPSG) layer on the PSG layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully