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Abstract

The invention proposes a novel technique for implementing high performance atomic lithography, and in particular high resolution lithography. The technique makes use of Stern-Gerlach type atomic interferometry enabling disturbances to be implemented in the atomic phase of the beam. Such interaction then directly modulates the intensity of the associated wave in the plane extending transversely to the beam of atoms, and does so in controllable manner. The installation of the invention for nanolithography by atomic interferometry comprises a Stern-Gerlach type interferometer comprising, as its phase object, four-pole magnetic induction having a transverse gradient created by four parallel bars carrying alternating direct currents, bracketed between two separator plates, preceded and followed respectively by a spin polarizer and by an analyzer operating by laser pumping. An additional uniform field is being created by another four additional bars powered in paired manner by adjustable currents in order to create a uniform field of arbitrary intensity and orientation for the interference pattern by adjusting the two current parameters. The source of atoms is a source that continuously discharges metastable helium or argon with approximately Maxwell type speed dispersion of about 30% to 40% in order to obtain a central spot.

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First Claim