Method for forming a copper thin film
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United States of America Patent
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May 3, 2005
Grant Date -
Oct 31, 2002
app pub date -
Apr 26, 2002
filing date -
Apr 27, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for forming a Cu thin film on a substrate includes a Cu-CVD step forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an eletrolytic copper plating process using the first copper film as an electrode. A modifying step modifies the first copper film by exposing it in an active atmosphere between the Cu-CVD step and the plating step. Fine voids can thereby be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.
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