Method for depositing a coating having a relatively high dielectric constant onto a substrate
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United States of America Patent
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Apr 26, 2005
Grant Date -
Feb 13, 2003
app pub date -
Mar 19, 2002
filing date -
Mar 20, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.
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