Production process for semiconductor apparatus
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United States of America Patent
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Apr 19, 2005
Grant Date -
N/A
app pub date -
Dec 5, 2002
filing date -
Apr 26, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A production process for a semiconductor apparatus is provided in which there is no danger of particle generation, and consequently no danger of associated problems resulting from the presence of particles, such as shorting, and which as a result, is capable of producing improved product yields, good product quality stability and improved product reliability. A resist 13b is formed on those regions of a N-type silicon substrate 1 on which wiring is not to be formed, a conductive layer 15 is formed across the entire surface of the N-type silicon substrate 1 including the resist 13b, and the conductive layer 15 is then polished by mechanical polishing, as this result, the surface of the resist 13b is exposed.
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