Metal interconnect reliability evaluation device, method thereof, and recording medium storing program for evaluating reliability of metal interconnect

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United States of America Patent

PATENT NO 6879925
SERIAL NO

09959073

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Abstract

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Estimation related to void formation and breakage/failure is performed through numerical simulation using dominant parameters of EM damage in a metal interconnect. The metal interconnect is divided into elements. Current density and temperature distribution is obtained using numerical analysis. Atomic flux divergence AFD.sub.gen of each element and the distribution thereof is calculated by using material property constants determined through acceleration testing. The reduction of volume per one calculation step in the simulation is found by multiplying the volume of each element, the length of time corresponding to one calculation step, and the atomic volume corresponding to the calculated AFD.sub.gen. Based on the reduced amount of volume, the thickness of each element decreases. The elements having a decrease in thickness show the fact that voids have formed. The numerical analysis of the current density and temperature distribution in the metal interconnect is once again performed considering the thickness of each element.

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Patent Owner(s)

Patent OwnerAddress
HIROSAKI UNIVERSITYJAPAN'S AOMORI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sasagawa, Kazuhiko Saitama, JP 10 32

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