Method and apparatus for exposing photoresists using programmable masks
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United States of America Patent
Stats
-
Apr 12, 2005
Grant Date -
Jun 26, 2003
app pub date -
Nov 18, 2002
filing date -
Nov 19, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Method and apparatus for exposing photo resists using programmable masks increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths of light, two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.
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