Contact type micro piezoresistive shear-stress sensor
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United States of America Patent
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Apr 12, 2005
Grant Date -
Nov 28, 2002
app pub date -
Oct 22, 2001
filing date -
Nov 16, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
There is disclosed a semiconductor sensor for measuring the contact shear stress distribution between the socket of an above-knee (AK) prostheses and the soft tissue of an amputee's stump. The sensor is fabricated by the micro-electro-mechanical system (MEMS) technology, and its main sensing part is 2-X shaped with a flange structure. The sensor is prepared by anisotropic wet etching of bulk silicon in KOH solution and a square flange above the sensing diaphragm is formed through surface micromachining of deposited SiO.sub.2 thin film. This invention has the following characteristics: piezo-resistivity of the monolithic silicon will be utilized to convert shear deformation of the sensor into an electrical signal and a micro sensor which can measure the shear force vector acting on the sensing flange.
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