Method of improving adhesion of cap oxide to nanoporous silica for integrated circuit fabrication
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United States of America Patent
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Apr 5, 2005
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app pub date -
Jul 9, 2001
filing date -
Apr 7, 2000
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Abstract
A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.
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