In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 29, 2005
Grant Date -
N/A
app pub date -
Nov 1, 2001
filing date -
Nov 1, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In accordance with an embodiment of the present intention, a fluorine residue removing method includes: supplying an oxygen-containing gas and a hydrogen-containing gas into a CVD chamber; producing a plasma of a mixture of the oxygen-containing gas and the-hydrogen containing gas, so that the plasma reacts with the fluorine residue, exothermically generating water; and evacuating from the CVD chamber a product of the reaction between the plasma and the fluorine residue. For the hydrogen-containing gas, NH.sub.3 is often used, and for the oxygen-containing gas, N.sub.2 O, O.sub.2, or air is used. Exemplary mixtures of the oxygen-containing and the hydrogen-containing gases include 70 mol % N.sub.2 O/NH.sub.3, 50 mol % N.sub.2 O/NH.sub.3, and 52 mol % O.sub.2 /NH.sub.3. An inert gas, such as He, Ne, Ar, or Kr, can be optionally supplied into the chamber to stabilize the plasma.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully