Method of forming a semiconductor component
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United States of America Patent
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Mar 29, 2005
Grant Date -
Jul 10, 2003
app pub date -
Dec 17, 2002
filing date -
Jan 7, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention relates to a method of forming a semiconductor component comprising the steps of: providing a semiconductor substrate, forming a pattern of pores in the semiconductor substrate, the pores having a first depth, photoassisted wet etching of the substrate for etching of the pores to a second depth, the second depth being substantially greater than the first depth.
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