Semiconductor memory and its production process
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United States of America Patent
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Mar 22, 2005
Grant Date -
Aug 21, 2003
app pub date -
Jun 20, 2002
filing date -
Jun 22, 2001
priority date (Note) -
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Abstract
A semiconductor memory comprises: a first conductivity type semiconductor substrate and memory cells each constituted of an island-like semiconductor layer, a charge storage layer and a control gate, the charge storage layer and the control gate being formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, wherein the memory cells are disposed in series, and the island-like semiconductor layer on which the memory cells are disposed has cross-sectional areas in a horizontal direction which vary stepwise.
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