Method for a tungsten silicide etch
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 22, 2005
Grant Date -
N/A
app pub date -
Dec 17, 1999
filing date -
Dec 17, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A tungsten silicide etch process allows for a high etch rate and about 90.degree. sidewall profiles of etched features. According to an example embodiment, a substrate is placed into an etch zone and a process gas comprising SF.sub.6, He, HBr, and a chlorine-containing gas is introduced in the etch zone. A plasma is generated in the etch zone to form an etch gas from the process gas that anisotropically etches the tungsten silicide layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully