Method of forming metal line in semiconductor device including forming first and second zirconium films
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United States of America Patent
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Mar 22, 2005
Grant Date -
N/A
app pub date -
Dec 23, 2003
filing date -
Nov 13, 2003
priority date (Note) -
Expired
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Abstract
Provided is a method of forming a metal line in a semiconductor device. According to the present invention, a barrier metal layer, a Zr film, and a Cu thin film is sequentially formed in insides of a dual damascene pattern comprising via holes and trenches. Then, a Zr film is formed on the Cu thin film, and Zr is allowed to be diffused into crystal particles of Cu and interfaces between the crystal particles by carrying out a heat treatment process thereto, so that uniform Cu (Zr) bonds are formed regardless of a depth. As a result, an EM resistance characteristic of the Cu thin film even in narrower and deeper via holes can be improved, and thus reliability of process and an electrical characteristic of a device can be also improved.
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