Method and apparatus for the production of a semiconductor compatible ferromagnetic film
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United States of America Patent
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Mar 22, 2005
Grant Date -
Apr 15, 2004
app pub date -
Aug 21, 2003
filing date -
Mar 14, 2002
priority date (Note) -
Expired
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Abstract
Films of gallium manganese nitride are grown on a substrate by molecular beam epitaxy using solid source gallium and manganese and a nitrogen plasma. Hydrogen added to the plasma provides improved uniformity to the film which may be useful in spin-based electronics.
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