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Abstract

A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi.sub.2 O.sub.3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB.sub.2 O.sub.6, A.sub.2 B.sub.2 O.sub.7 and A.sub.2 Bi.sub.2 B.sub.2 O.sub.10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (Ba.sub.x Sr.sub.1-x)(Ta.sub.y Nb.sub.1-y).sub.2 O.sub.6, where 0.ltoreq.y.ltoreq.1.0 and 0.ltoreq.y.ltoreq.1.0; (Ba.sub.x Sr.sub.1-x).sub.2 (Ta.sub.y Nb.sub.1-y).sub.2 O.sub.7, where 0.ltoreq.x.ltoreq.1.0 and 0.ltoreq.y.ltoreq.1.0; and (Ba.sub.x Sr.sub.1-x).sub.2 Bi.sub.2 (Ta.sub.y Nb.sub.1-y).sub.2 O.sub.10, where 0.ltoreq.x.ltoreq.1.0 and 0.ltoreq.y.ltoreq.1.0. Thin films according to the invention have a relative dielectric constant .gtoreq.40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is <1000 ppm, preferably <100.

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First Claim