Method of surface treatment of semiconductor
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United States of America Patent
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Mar 15, 2005
Grant Date -
Aug 7, 2003
app pub date -
Dec 11, 2002
filing date -
Mar 29, 2000
priority date (Note) -
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Abstract
A method of removing native oxide film from contact holes of a semiconductor device by using a microwave-excited reactive gas. The method increases throughput. Reactive gas is introduced substantially horizontally into the reactor (20) by way of a chamber (5, 22) arranged as an extension thereof in the vertical direction of the reactor (20) and showing an internal pressure higher than that of the reactor, while the plurality of semiconductor silicon wafers (10) that are arranged in the vertical direction and held to temperature not higher than 323 K are being rotated, and subsequently said reactor is heated (30) to above 373 K.
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