Edge-emitting semiconductor tunable laser
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United States of America Patent
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Mar 8, 2005
Grant Date -
Oct 17, 2002
app pub date -
Apr 2, 2002
filing date -
Aug 4, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention concerns a tunable edge-emitting semiconductor laser (10) including a resonant cavity delimited by two reflectors (15, 20), one of which is a fixed reflector (15) and the other of which is a mobile reflector (20), and including an active section (1) with gain of length L.sub.1 and a tunable section (2) of length L.sub.2, characterized in that the total length of the cavity L=L.sub.1 +L.sub.2 is less than or equal to 20 .mu.m.
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