Spacer chalcogenide memory method and device

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United States of America Patent

PATENT NO 6864503
APP PUB NO 20040026686A1
SERIAL NO

10215956

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Abstract

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The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI-HSIN RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang Lan Hsinchu, TW 118 7130

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