Photoelectric cell and process for producing metal oxide semiconductor film for use in photoelectric cell
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United States of America Patent
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Mar 8, 2005
Grant Date -
Aug 14, 2003
app pub date -
Feb 6, 2003
filing date -
May 29, 1998
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Abstract
A photoelectric cell that includes a first insulating base, having on its surface a first electrode layer, which has on its surface a metal oxide semiconductor film, which includes anatase titanium oxide particles, on which a photosensitizer is absorbed and a second insulating base having on its surface a second electrode layer and an electrolyte sealed between the metal oxide semiconductor film and the second electrode layer. The first electrode layer and the second electrode layer are arranged opposite from each other. At least one of the first and second insulating bases with an electrode layer is transparent.
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