Manufacturing method of semiconductor device
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United States of America Patent
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Mar 8, 2005
Grant Date -
Apr 1, 2004
app pub date -
Jun 17, 2003
filing date -
Jun 18, 2002
priority date (Note) -
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Abstract
A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.
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