Epitaxial growth furnace
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United States of America Patent
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Mar 8, 2005
Grant Date -
N/A
app pub date -
Feb 21, 2001
filing date -
Jul 27, 1998
priority date (Note) -
Expired
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Abstract
An epitaxial growth furnace is provided for effecting the formation of an epitaxial layer on the surface of a semiconductor wafer by CVD in a reaction chamber of the furnace. The furnace comprises a wafer holder having an opening for exposing a surface area of the wafer which is subject to epitaxial growth, an opening flange adapted for engagement with a chamfered tapered face of a whole peripheral edge of the wafer on the side of said surface area thereof, and a plurality of jaws for detachably engaging with an outer periphery of the wafer on a back surface side of said surface area.
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