Method of forming a Ta2O5 comprising layer
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United States of America Patent
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Mar 8, 2005
Grant Date -
Aug 5, 2004
app pub date -
Feb 4, 2003
filing date -
Feb 4, 2003
priority date (Note) -
Expired
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Abstract
In one aspect, a substrate is positioned within a deposition chamber. Gaseous precursors comprising TaF.sub.5 and at least one of H.sub.2 O and O.sub.3 are fed to the deposition chamber under conditions effective to deposit a Ta.sub.2 O.sub.5 comprising layer on the substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate within the chamber to form a first species monolayer from a gaseous first precursor comprising TaF.sub.5. The chemisorbed first species is contacted with a gaseous second precursor comprising at least one of H.sub.2 O and O.sub.3 to react with the first species to form a monolayer comprising Ta and O. The chemisorbing and contacting are successively repeated under conditions effective to form a mass of material on the substrate comprising Ta.sub.2 O.sub.5.
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