Method for using a surface geometry for a MOS-gated device in the manufacture of dice having different sizes
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United States of America Patent
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Mar 1, 2005
Issued Date -
N/A
app pub date -
May 10, 2002
filing date -
May 10, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A surface geometry for a MOS-gated device is provided that allows device size to be varied in both the x-axis and the y-axis by predetermined increments. The actual device size is set or 'programmed' by the metal and pad masks or the contact metal and pad masks. This approach saves both time and expense, since only new contact, metal and pad masks, or new metal and pad mask are required for each new device. Wafers may also be manufactured and stored at an inventory location prior to contact or metal mask, significantly reducing the time required to manufacture new devices. It is also be possible to qualify a family of devices made using this approach without qualifying each device. In addition, the location of the source or the source and gate bonding pads may be easily moved for assembly in a new package or for a new application.
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