Semiconductor diode device
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United States of America Patent
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Feb 22, 2005
Grant Date -
Feb 26, 2004
app pub date -
Jun 11, 2003
filing date -
Dec 12, 2000
priority date (Note) -
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Abstract
A multi-layer semiconductor diode having a layer of wide bandgap material located between the active layer and a first contact zone, where the active layer and additional wide bandgap layer are of one dopant type, and the first contact zone is of the opposite dopant type. A specific embodiment of the invention comprises a stack formed from a first contact zone (4) of p-type material, a lightly doped p-type active layer (2), an additional p layer (20) and a second contact zone (6) of n-type material. The diode may be used as an infrared detector or a negative luminescent source.
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