Method for the production of low defect density silicon
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 22, 2005
Grant Date -
May 16, 2002
app pub date -
Oct 5, 2001
filing date -
Nov 3, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G.sub.0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325.degree. C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully