High frequency semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 8, 2005
Grant Date -
Oct 3, 2002
app pub date -
Feb 21, 2002
filing date -
Mar 30, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A high frequency semiconductor device including wiring layers which are formed above a semiconductor substrate and in which transmission lines are formed by combining with a ground plate having a potential fixed at the ground potential, at least one crossing portion in which the wiring layers mutually cross, with insulating interlayers provided therebetween, and at least one separation electrode being selectively provided on one of the insulating interlayers, the at least one separation electrode having a potential fixed at the ground potential. Accordingly, in the high frequency semiconductor device, electrical interference between two crossing wiring layer is prevented and transmission loss is suppressed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully