Semiconductor memory device and method of producing the same
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United States of America Patent
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Jan 4, 2005
Grant Date -
Aug 8, 2002
app pub date -
Apr 4, 2002
filing date -
Jul 8, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor memory device has access transistors with a gate and a pair of impurity diffusion layers formed on a semiconductor substrate and memory capacitors with a storage node electrode and a cell plate electrode. The electrodes are connected to each other via a capacitive insulating layer made of a ferroelectric material. The storage node electrode has a surface covered with the capacitive insulating layer and is formed in a shape of column on one of the pair of impurity diffusion layers in a hole formed from an inter-layer insulating film covering the access transistor to the one of the pair of impurity diffusion layers. A upper surface of the column does not exceed the inter-layer insulating film. The storage node electrode formed in the hole face the cell plate electrode via the inter-layer insulating film.
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