Large-area membrane mask and method for fabricating the mask
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United States of America Patent
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Dec 28, 2004
Grant Date -
Feb 13, 2003
app pub date -
Aug 8, 2002
filing date -
Aug 8, 2001
priority date (Note) -
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Abstract
In order to increase the rigidity of a membrane mask that can be used for ion projection lithography, a second wafer made of the material of the membrane layer is provided in addition to a first wafer. The second wafer is patterned in the same way as the first wafer to form a second carrying ring and is fitted on the membrane layer in a mirror-inverted manner with respect to the first wafer so that the membrane area is arranged between the first and second carrying rings in a centered manner in the direction perpendicular to the membrane plane.
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