Method for forming semiconductor device
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United States of America Patent
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Dec 21, 2004
Grant Date -
Jan 15, 2004
app pub date -
Jul 8, 2003
filing date -
Jul 12, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention discloses a method for forming a semiconductor device which increases capacitance by forming a structure of a trench capacitor and uses an inner side face of the capacitor as a capacitor region.
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